Responsible Matteo Carrega
The development of new quantum technologies requires the investigation of both innovative materials and device designs, in order to fully exploit quantum phenomena from the nano- to the macro- scale towards new applications and industrial impact.
Thus, a synergetic approach between experimental and theoretical SPIN researchers in modelling, fabrication, and characterization of new materials is needed covering a wide range of cutting-edge scientific topics and materials, alike 2D heterostructures, oxide interfaces, high-mobility semiconductors, strong spin-orbit materials, hybrid semiconductor/superconductor devices, high temperature superconductors, and topological materials.
The institute competences include state of the art fabrication techniques (such as epitaxial growth of complex systems), low temperature magneto-transport, advanced electron and advanced spectroscopy methods and condensed matter theoretical studies (including analytical and numerical ab initio methods).
The investigation of quantum transport phenomena in nanoscale devices based on low dimensional systems (e.g oxide interfaces, 2D flakes and semiconductors, topological insulators) and in unconventional superconductors provide new insights in fundamental aspects, such as the emergence of new states of matter, that can open new-pathways for future applications. A deep understanding of fundamental aspects, such as the role of electronic correlations, spin-orbital degree of freedom, superconducting proximity effects, is a primary goal of this area.
In parallel, novel methods and concepts beyond conventional ones are targeted, including the study of non-equilibrium phenomena (also in presence of time dependent sources) and the investigation of thermodynamic aspects in quantum devices. Dealing with nanoscale technologies, the unavoidable impact of quantum mechanics on thermodynamic properties, such as heat and energy exchanges, represent a relevant issue with potential impact on new thermoelectric devices with improved performances and in the pursuit for low-power and energy cost effective quantum information and computing applications.
A synthetic list of research domains and keywords related to activity 3.1 follows:
- Materials for quantum devices and topological states of matter: epitaxial growth of complex materials, e.g. oxide interfaces and topological insulators; Growth of Topological insulator and single crystals; growth of Al, Nb, NbRe, MoSi, High-Tc superconductors
- Advanced Spectroscopies on novel materials: Synchrotron based spectroscopies: RIXS, XAS, ARPES, RESPES, time resolved experiments using free-electron lasers on unconventional superconductors; Scanning tunnelling spectroscopies; MOmentum and position REsolved mapping Transmission Electron energy loss Microscope
- Quantum transport in hybrid superconductor-semiconductor devices and low-dimensional systems: Fractional quantum Hall effects and interferometry of edge states; Topological insulators and interaction effects; Topological Josephson junctions and anomalous Josephson effect in mesoscopic junctions: Topological SC at oxide interfaces and in Hybrid SC/semiconductor devices ; Study of non-reciprocal superconducting (supercurrent diode) and normal transport; Topological states and novel quantum effects in materials with nanoscale curved geometries; 2D quantum phenomena.
- Non-equilibrium open quantum systems and quantum thermodynamics: Novel methods and concepts, including the study of non-equilibrium phenomena and the investigation of thermodynamic aspects in quantum devices, are targeted. Dealing with nanoscale technologies, the unavoidable impact of quantum mechanics on thermodynamic properties, such as heat and energy exchanges, represent a relevant issue with potential impact on new thermoelectric devices with improved performances and in the pursuit for low-power and energy cost effective quantum information and computing applications.